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CAS NO.3103086-41-2 2,6-Diaza-3,5-disilaheptane-3,3,5,5-tetramine, N3,N3,N5,N5,2,3,5,6-octamethyl-

3103086 41 2

Product name

2,6-Diaza-3,5-disilaheptane-3,3,5,5-tetramine, N3,N3,N5,N5,2,3,5,6-octamethyl-

CAS NO.

3103086-41-2

Purity

95%

Product Features

CAS NO.3103086-41-2 2,6-Diaza-3,5-disilaheptane-3,3,5,5-tetramine, N3,N3,N5,N5,2,3,5,6-octamethyl-

Product Name

2,6-Diaza-3,5-disilaheptane-3,3,5,5-tetramine, N3,N3,N5,N5,2,3,5,6-octamethyl-

Synonyms

2,6-Diaza-3,5-disilaheptane-3,3,5,5-tetramine, N3,N3,N5,N5,2,3,5,6-octamethyl-

CAS NO.

3103086-41-2

Appearance

Colorless liquid

Purity

95%

MF

C11H32N4Si2

MW

276.57

Storage

Preserve in a well-closed container and keep in cool, dry place, avoid light.

Package

In fluoride bottle/ Fluoride drums/iron drums/plastic drums

Shipment method

By Sea, Air, Courier door to door, etc.

Loading Port

China any port, Beijing, Shanghai, Hong Kong etc.

Application

1,Precursors for Semiconductor and Electronic Materials

Silicon Nitride Thin Films

Silicon-Nitrogen-Carbon Ceramic Materials

ALD/CVD Deposition Precursors

Semiconductor Insulating Layer Materials

 

2,Ceramic Precursors

High-Temperature Resistant Ceramics

Aerospace Composite Materials

Corrosion-Resistant Coatings

Specialty Fibers

 

3,Cross-linking Agents and Functional Monomers

Epoxy Resin Cross-linking Agents

Polyurethane Modifiers

Functional Monomers for Silicone Resins

Specialty Polymer Intermediates

Contact

Contact person: Mr.Forrest Lee

Email: forrest.lee@dakenchem.com

 

Q1. What is CAS 3103086-41-2?

CAS 3103086-41-2 is a high-purity organosilicon amine compound containing Si–N bonds. It is commonly used as a precursor for advanced semiconductor materials and silicon-containing thin films.

 

Q2. What are the main applications of this product?

It is primarily used in semiconductor manufacturing, silicon nitride film deposition, advanced ceramic materials, and specialty organosilicon synthesis.

 

Q3. Can it be used as an ALD or CVD precursor?

Yes. Its silicon-nitrogen structure makes it a promising precursor for Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) processes.

 

Q4. Why is it valuable for semiconductor applications?

The molecule provides both silicon and nitrogen sources, helping produce high-quality silicon nitride and related dielectric materials.

 

Q5. What purity grades are available?

Electronic-grade and customized high-purity grades may be supplied depending on customer requirements.

 

Application Case 1: Silicon Nitride Thin Film Deposition

Semiconductor Manufacturing

CAS 3103086-41-2 is used as a silicon-containing precursor in the deposition of silicon nitride (SiNx) thin films. These films serve as dielectric layers, diffusion barriers, and passivation coatings in advanced semiconductor devices.

The molecule contains both silicon and nitrogen functionalities, making it a promising precursor for producing high-quality films with controlled composition and excellent electrical performance.

Benefits

Silicon and nitrogen source in one molecule

Suitable for advanced thin-film processes

Potentially reduced contamination compared with traditional halosilane precursors

Supports high-purity semiconductor manufacturing

 

Application Case 2: Advanced ALD Process Development

Atomic Layer Deposition (ALD)

Research institutions and semiconductor material developers use CAS 3103086-41-2 when evaluating next-generation ALD precursors for nanoscale film growth.

As device geometries continue to shrink, conventional precursors may face limitations in conformality and film quality. Organosilicon amine compounds are increasingly investigated as alternatives for advanced deposition technologies.

Benefits

Suitable for precursor screening programs

Supports ultra-thin film formation

Potential application in next-generation microelectronics

Useful for process optimization studies

 

Application Case 3: Preceramic Polymer Synthesis

Advanced Ceramic Materials

CAS 3103086-41-2 can be incorporated into the synthesis of silicon-containing preceramic polymers. These materials are subsequently converted into silicon carbonitride (SiCN) or related ceramic materials through controlled pyrolysis.

Such ceramics are widely studied for high-temperature and harsh-environment applications.

Benefits

Silicon-nitrogen backbone chemistry

Useful building block for ceramic precursor systems

Supports development of heat-resistant materials

Applicable in aerospace and advanced engineering research

 

Application Case 4: Electronic Materials Research

Functional Materials Development

Universities, R&D laboratories, and specialty materials companies use CAS 3103086-41-2 as an intermediate for developing innovative electronic and functional materials.

Its multiple amino groups provide reactive sites for molecular design, enabling researchers to create customized silicon-containing compounds for emerging technologies.

Benefits

High reactivity

Versatile molecular structure

Suitable for material innovation projects

Valuable research-grade intermediate

 

Application Case 5: Specialty Organosilicon Intermediate Manufacturing

Organosilicon Synthesis

CAS 3103086-41-2 serves as a specialty intermediate in the production of high-performance organosilicon compounds. Manufacturers can utilize its unique silicon-nitrogen framework to build customized molecules for coatings, resins, and advanced chemical systems.

Its multifunctional structure allows efficient incorporation into complex synthesis routes.

Benefits

Multiple reactive amino functionalities

Useful for specialty chemical synthesis

Supports development of high-value organosilicon products

Suitable for customized industrial formulations

 

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